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N-type silicon wafer

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Customized products for various types of production lines for customers

Continuous increase in production capacity to meet customer needs

Property

Project Specifications Test method
Growth pattern Czochralski Technique --
Crystallinity Single crystal --
Size M10:182.2*182.2*φ247mm
M10-L:182.2*183.75*φ247mm
Silicon wafer automatic detection equipment
Thickness 130±8μm Silicon wafer automatic detection equipment

Electrical performance

Project Specifications Test method
Resistivity 0.4-1.6 Ω.cm Silicon wafer automatic detection equipment
Minority lifespan ≥1000/μs Transient photoconductivity decay method
Injection level: 5E14cm-3 (Sinton BCT-400)
Oxygen content ≤6E+17 at/cm³ FT-IR
Carbon content ≤ 5E+16 at/cm³ FT-IR
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