| Project | Specifications | Test method |
| Growth pattern | Czochralski Technique | -- |
| Crystallinity | Single crystal | -- |
| Conduction type | P-type | P/N type tester |
| Size | M10：182.2*182.2*φ247mm G12： 210*210*φ295mm | Silicon wafer automatic detection equipment |
| Thickness | M10：150±10µm 140±10µm G12：150±10µm | Silicon wafer automatic detection equipment |
| Project | Specifications | Test method |
| Resistivity | 0.4-1.1 Ω.cm | Silicon wafer automatic detection equipment |
| Minority lifespan | ≥70μs | Quasi steady state photoconductivity decay method/transient photoconductivity decay method Injection level: 1E15 cm⁻³（Sinton BCT-400） |
| Oxygen content | ≤7.5E+17 at/cm³ | FT-IR |
| Carbon content | ≤ 5E+16 at/cm³ | FT-IR |
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