|
Serial Number |
Project |
Specifications |
Test Method |
|
Material Propeties |
|||
|
1 |
Growth Method |
Czochralski (CZ) |
- |
|
2 |
Dopant |
Boron doped |
- |
|
3 |
Type |
P-Type |
Napson EC-80TPN |
|
4 |
Oxygen content |
≤8.0×1017 atoms/cm3 |
FTIR(ASTM F121-83) |
|
5 |
Carbon content |
≤5.0×1016 atoms/cm3 |
FTIR(ASTM F123-91) |
|
6 |
Surface orientation |
﹤100﹥±3º |
X-ray Diffraction Method |
|
8 |
Dislocation Density |
≤500 pcs/cm² |
Preferential Etch Techniques(ASTM F47-88) |
|
Electrical Propeties |
|||
|
1 |
Resistivity |
■ 0.5-1.5 Ω·cm
□ 1.0-3.0 Ω·cm |
4-probe resistivity measurement |
|
2 |
Silicon rod minority lifetime |
≥50us |
Sinton BCT-400（SEMI PV13） |
EN
