|
Serial Number |
Project |
Specifications |
Test method |
|
Material Propeties |
|||
|
1 |
Growth Method |
Directional solidification of ingot |
- |
|
2 |
Dopant |
Boron doped |
- |
|
3 |
Type |
P-Type |
Napson EC-80TPN |
|
4 |
Oxygen content |
≤5.0×1017 atoms/cm3 |
FTIR(ASTM F121-83) |
|
5 |
Carbon content |
≤7.0×1016 atoms/cm3 |
FTIR(ASTM F123-91) |
|
6 |
Impurities(mm) |
Size ≤ 2 and number ≤ 5 |
PlB R55i |
|
Electrical Propeties |
|||
|
1 |
Resistivity |
0.8-2 Ω·cm |
RT-1000 |
|
2 |
Silicon rod minority lifetime |
≥6.0us |
WT2010D |